Optimization of Quantum Dot Light-Emitting Diodes Based on GO Electron Barrier Layer

The key to the high performance of QDS is the charge balance between holes and electrons. In this study, graphene oxide (GO) was introduced between the luminescence layer and the electron transport layer of quantum dots as an electron barrier layer. With the optimized GO thickness, the brightness and current efficiency of the device are improved by 96.7% and 146%, respectively. These improvements are mainly attributed to the increased energy level barrier resulting from the band structure of the electron barrier layer. The results show that the GO layer can reduce the number of electron injection and improve the device performance.