Interfacial Modification of Anode ITO for the Performance Improvement of QLED

Modification of electrodes can effectively improve the performance of Quantum Dot Light Emitting Diodes (QLED). The anode ITO interface is modified with the methods of ultraviolet irradiation and ultraviolet irradiation with solution-immersion, respectively. The influence of interfacial modification of anode ITO on reducing injection barrier and enhancing the injection efficiency of carriers is also studied. Results show that the method of ultraviolet irradiation with solution-immersion can effectively regulate the injection barrier and balance the charge injection, compared to the method of ultraviolet irradiation. After immersing in the solution in which the volume ratio of H₂O₂ and C₆H₄Cl₂ is 1:5, and illuminating simultaneously by UV for 15 min, the device exhibits a maximum EQE of 11.97%, a maximum current efficiency of of 3.54 cd/A, and a maximum luminance of 14 194 cd/m².