Abstract:
Simulating experiments of H
+ irradiation were made for the C-SiC coatings deposited by ion beam mixing on stainless steel substrates. Hydrogen depth profiles of SIMS spectra were measured for the specimen before and after H
+ ion irradiation. XPS was used to analyze the chemical bonding energy for C and Si elements of coatings before and after H
+ ion irradation. Relationship between the changes of the chemical bond states for the elements of the C-SiC films and hydrogen was studied. Related mechanism of hydrogen resistant property for the C-SiC coatings was discussed.