Abstract: With the development of society and the progress of science and technology, electronic equipment and instruments are becoming more and more sophisticated, miniaturized and high-performance, and the high demand for heat conduction and heat dissipation caused by the improvement of efficiency has also attracted great attention from scientific researchers. Among them, silicon carbide (SiC) have been widely used in various high-tech fields such as semiconductors, nuclear energy, national defense and space technology due to its excellent wear resistance, high temperature mechanical properties, oxidation resistance, wide band gap and other characteristics. In view of the importance of the thermal conductivity of SiC, this review summarizes and discusses the crystal structure, thermal conduction mechanism, polymorphs, secondary phases, crystal size, porosity, temperature and other factors that affect the thermal conductivity of silicon carbide. The influence of SiC-doping with other substances on its thermal conductivity is discussed. The current research progress and application of SiC as the thermal conductive material are described. Finally, a reasonable prospect for the future development of SiC as the thermal conductive material is given.