Abstract: The oxidation kinetics of SiC was investigated by oxidation process and oxidation mass gain test, and the interface reactions of SiC_p/Al composites with pre-oxidated SiC particles were discussed. The results show that the oxidation weight gain increases rapidly, and then increases slowly with increasing oxidation time, which obeys the parabolic law. The oxidation rate of SiC increases with oxidation temperature, while the thickness of the oxide film is not significantly increased as the oxidation temperature is less than 900℃ or higher than 1 300℃. According to the effect of pre-oxidation, the oxidation temperature of 1 100℃ and the oxidation time of 10 h are preferable for pre-oxidation of SiC. Formation of the interface phase of Al₂O₃ in SiC_p/Al composites with pre-oxidated SiC particles results in inhibiting the occurrence of the interface phase of Al₄C₃.