ZHANG Wen-jing, ZHANG Qin, ZOU Wen-dong, CHANG Chun, XIONG Nan-fei, LI Feng, LI Qing-hua. Failure of Quantum Dot Light-emitting Diode Under High Voltage[J]. Failure Analysis and Prevention, 2018, 13(6): 335-338, 351. DOI: 10.3969/j.issn.1673-6214.2018.06.001
    Citation: ZHANG Wen-jing, ZHANG Qin, ZOU Wen-dong, CHANG Chun, XIONG Nan-fei, LI Feng, LI Qing-hua. Failure of Quantum Dot Light-emitting Diode Under High Voltage[J]. Failure Analysis and Prevention, 2018, 13(6): 335-338, 351. DOI: 10.3969/j.issn.1673-6214.2018.06.001

    Failure of Quantum Dot Light-emitting Diode Under High Voltage

    • As the next generation device for lighting and display, the research on the failure of quantum dot light-emitting diode (QLED) has important value and significance to improve its reliability and promote its application in market.By applying a constant voltage of 7 V to the QLED device, it can be found that the large voltage causes the device to fail quickly.The average median life of the QLED is 4 h and the life is 45 h.The main failure mode is that the current density and brightness of the QLED devices drop sharply, eventually no longer emitting light, and some black spots appear on the surface of the device.The possible failure mechanism is a chemical reaction in functional layers such as the Al electrode or delamination at the interface, resulting the device failure due to the inability of inject charge.
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